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NDD04N50Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State
NDD04N50Z
(Note 3) NDD04N50Z
(Note 2) NDD04N50Z ? 1
R q JC
R q JA
2.0
40
80
° C/W
2. Insertion mounted
3. Surface mounted on FR4 board using 1 ″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
BV DSS
D BV DSS /
D T J
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
500
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
I DSS
I GSS
V DS = 500 V, V GS = 0 V
V GS = ± 20 V
25 ° C
150 ° C
1.0
50
± 10
m A
m A
ON CHARACTERISTICS (Note 4)
Static Drain ? to ? Source
On ? Resistance
Gate Threshold Voltage
Forward Transconductance
R DS(on)
V GS(th)
g FS
V GS = 10 V, I D = 1.5 A
V DS = V GS , I D = 50 m A
V DS = 15 V, I D = 1.5 A
3.0
2.3
2.1
2.7
4.5
W
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
Reverse Transfer Capacitance (Note 5)
Total Gate Charge (Note 5)
Gate ? to ? Source Charge (Note 5)
Gate ? to ? Drain (“Miller”) Charge (Note 5)
C iss
C oss
C rss
Q g
Q gs
Q gd
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 250 V, I D = 3.4 A,
V GS = 10 V
246
33
7.0
6.0
1.3
3.5
308
43
9.0
12
2.6
6.1
370
53
11
18
4.0
7.0
pF
nC
Plateau Voltage
V GP
6.6
V
Gate Resistance
R g
1.8
5.4
16.2
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
9.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 250 V, I D = 3.4 A,
V GS = 10 V, R G = 5 W
9.0
16
10
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V SD
t rr
Q rr
I S = 3.4 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 3.4 A, di/dt = 100 A/ m s
240
0.9
1.6
V
ns
m C
4. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
5. Guaranteed by design.
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